Line defects and Planar defects.

Line defects can be described by gauge theories.

• Dislocations are linear defects around which some of the atoms of the crystal lattice are misaligned. There are two basic types of dislocations, the edge dislocation and the screw dislocation. "Mixed" dislocations, combining aspects of both types, are also common. An edge dislocation is shown. The dislocation line is presented in blue, the Burgers vector b in black. Edge dislocations are caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the adjacent planes are not straight, but instead bend around the edge of the terminating plane so that the crystal structure is perfectly ordered on either side. The analogy with a stack of paper is apt: if a half a piece of paper is inserted in a stack of paper, the defect in the stack is only noticeable at the edge of the half sheet. The screw dislocation is more difficult to visualise, but basically comprises a structure in which a helical path is traced around the linear defect (dislocation line) by the atomic planes of atoms in the crystal lattice. The presence of dislocation results in lattice strain (distortion). The direction and magnitude of such distortion is expressed in terms of a Burgers vector (b). For an edge type, b is perpendicular to the dislocation line, whereas in the cases of the screw type it is parallel. In metallic materials, b is aligned with close-packed crytallographic directions and its magnitude is equivalent to one interatomic spacing. Dislocations can move if the atoms from one of the surrounding planes break their bonds and rebond with the atoms at the terminating edge. It is the presence of dislocations and their ability to readily move (and interact) under the influence of stresses induced by external loads that leads to the characteristic malleability of metallic materials. Dislocations can be observed using transmission electron microscopy, field ion microscopy and atom probe techniques. Deep level transient spectroscopy has been used for studying the electrical activity of dislocations in semiconductors, mainly silicon.

• Disclinations are line defects corresponding to "adding" or "subtracting" an angle around a line. Basically, this means that if you track the crystal orientation around the line defect, you get a rotation. Usually they play a role only in liquid crystals.

An edge dislocation is shown. The dislocation line is presented in blue, the Burgers vector b in black.

Planar defects:

• Grain boundaries occur where the crystallographic direction of the lattice abruptly changes. This usually occurs when two crystals begin growing separately and then meet.
• Anti-phase boundaries occur in ordered alloys: in this case, the crystallographic direction remains the same, but each side of the boundary has an opposite phase: For example if the ordering is usually ABABABAB, an anti phase boundary takes the form of ABABBABA.
• Stacking faults occur in a number of crystal structures, but the common example is in close-packed structures. Face-centered cubic (fcc) structures differ from hexagonal close packed (hcp) structures only in stacking order: both structures have close packed atomic planes with sixfold symmetry—the atoms form equilateral triangles. When stacking one of these layers on top of another, the atoms are not directly on top of one another—the first two layers are identical for hcp and fcc, and labelled AB. If the third layer is placed so that its atoms are directly above those of the first layer, the stacking will be ABA—this is the hcp structure, and it continues ABABABAB. However there is another location for the third layer, such that its atoms are not above the first layer. Instead, the fourth layer is placed so that its atoms are directly above the first layer. This produces the stacking ABCABCABC, and is actually a cubic arrangement of the atoms. A stacking fault is a one or two layer interruption in the stacking sequence, for example if the sequence ABCABABCAB were found in an fcc structure.